An economical ultrahigh vacuum four-point resistivity probeERICKSON, J. W; SEMANCIK, S.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1987, Vol 5, Num 1, pp 115-117, issn 0734-2101Article

Four-probe resitivity measurement on circlur and bowshaped isotropic samplesCHEN LIN; WU KE; YAN SHOUSHENG et al.Diwen wuli xuebao. 1993, Vol 15, Num 3, pp 183-189, issn 1000-3258Article

Computer-controlled piezoresistance data-acquisition systemAHMED AMIN.Review of scientific instruments. 1989, Vol 60, Num 12, pp 3812-3817, issn 0034-6748, 6 p.Article

Four point Hebb-Wagner polarization method for determining the electronic conductivity in mixed ionic-electronic conductorsRIESS, I.Solid state ionics. 1992, Vol 51, Num 3-4, pp 219-229, issn 0167-2738Article

Resistivity correction factor for the four-probe methodYAMASHITA, M.Journal of physics. E. Scientific instruments. 1987, Vol 20, Num 12, pp 1454-1456, issn 0022-3735Article

Simple method for resistance measurements on thin films and bulk of high T_c superconducting materialsALZETTA, G; ARIMONDO, E; CELLI, R. M et al.Journal de physique. III (Print). 1994, Vol 4, Num 8, pp 1495-1501, issn 1155-4320Article

Four-point probe resistivity measurements of dicing damage in (100) and (111) single crystal silicon wagersSEUNG HYUN KIM; DANYLUK, S.Journal of materials science. 1990, Vol 25, Num 11, pp 4892-4897, issn 0022-2461Article

Resistance fluctuations in a four-probe geometry with infinite leads = Fluctuations de résistance dans une géométrie à quatre sondes avec amenées de courant infiniesHERSHFIELD, S; VINAY AMBEGAOKAR.Physical review. B, Condensed matter. 1988, Vol 38, Num 12, pp 7909-7912, issn 0163-1829Article

The self-formation graded diffusion barrier of Zr/ZrNSONG, Z. X; WANG, J. A; LI, Y. H et al.Microelectronic engineering. 2010, Vol 87, Num 3, pp 391-393, issn 0167-9317, 3 p.Conference Paper

Cu contact on NiSi substrate with a Ta/TaN barrier stackMI ZHOU; YING ZHAO; WEI HUANG et al.Microelectronic engineering. 2008, Vol 85, Num 10, pp 2028-2031, issn 0167-9317, 4 p.Conference Paper

High-field transport studies of GaNBARKER, J. M; AKIS, R; FERRY, D. K et al.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 39-41, issn 0921-4526Conference Paper

Design of a miniature electrolyte conductivity probe using ISFETs in a four point configurationVOLANSCHI, A; OLTHUIS, W; BERGVELD, P et al.Sensors and actuators. B, Chemical. 1994, Vol 19, Num 1-3, pp 404-407, issn 0925-4005Conference Paper

Design and characterization of a four point probe for conducting polymer electrode studiesHOLTZKNECHT, L. J; MARK, H. B. JR; RIDGWAY, T. H et al.Analytical instrumentation. 1989, Vol 18, Num 1, pp 23-35, issn 0743-5797Article

Geometrical correction factor for resistivity of semiconductors by the square four-point probe methodYAMASHITA, M.Japanese journal of applied physics. 1986, Vol 25, Num 4, pp 563-567, issn 0021-4922, 1Article

Analytical tools for the characterization of power devicesSCHULZE, H.-J; FROHNMEYER, A; NIEDERNOSTHEIDE, F.-J et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3879-3888, issn 0013-4651Article

Standard reference materials: the certification of 100 mm diameter siliconresistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurementsEHRSTEIN, J. R; CROARKIN, M. C.NIST special publication. 1997, Num 260131, issn 1048-776X, 88 p.Serial Issue

An economical ultrahigh-vacuum probe of conductivity and mobilityERICKSON, J. W.Review of scientific instruments. 1989, Vol 60, Num 3, pp 502-504, issn 0034-6748Article

Effect of underfill on bending fatigue behavior of chip scale packageNOH, Bo-In; PARK, Noh-Chang; HONG, Won-Sik et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 5, pp 406-410, issn 0957-4522, 5 p.Article

Bubble aspect ratio and velocity measurement using a four-point fiber-optical probeLUTHER, S; RENSEN, J; GUET, S et al.Experiments in fluids. 2004, Vol 36, Num 2, pp 326-333, issn 0723-4864, 8 p.Article

Study of grain boundary polarization by two-probe and four-probe impedance spectroscopyDYGAS, J. R; FAFILEK, G; BREITER, M. W et al.Solid state ionics. 1999, Vol 119, Num 1-4, pp 115-125, issn 0167-2738Conference Paper

Determination of the depth of shallow implanted p⁺-n junctions by the four-point probe methodKINDER, R; HULENYI, L; MIKA, F et al.Physica status solidi. A. Applied research. 1996, Vol 157, Num 2, pp 393-398, issn 0031-8965Article

I-V Characteristics of single grain boundary in ZnO varistorWAKIYA, N; SUMINO, H; SHINOZAKI, K et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 1991, Vol 99, Num 9, pp 788-792, issn 0914-5400Article

Thermoelectric fluctuations in multilead devicesSEROTA, R. A; MA, M; GOODMAN, B et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 11, pp 6540-6543, issn 0163-1829Article

Four Point Probe Structures With Buried and Surface Electrodes for the Electrical Characterization of Ultrathin Conducting Films : International Conference on Microelectronic Test StructuresGROENLAND, Alfons W; WOLTERS, Rob A. M; KOVALGIN, Alexey Y et al.IEEE transactions on semiconductor manufacturing. 2012, Vol 25, Num 2, pp 178-184, issn 0894-6507, 7 p.Article

The local volumetric interfacial area transport equation : derivation and physical significanceMOREL, C; GOREAUD, N; DELHAYE, J.-M et al.International journal of multiphase flow. 1999, Vol 25, Num 6-7, pp 1099-1128, issn 0301-9322Article